Sapphire silicon wafer cutter.
Laser cutting silicon wafer.
It works as a two stage process in which defect regions are firstly introduced into the wafer by scanning the beam along intended cutting lines and secondly an underlying carrier membrane is expanded to induce fracture.
For silicon wafers less than 100 μm thick laser ablation offers an alternative to the blade technique which is too powerful for the delicate thin wafers.
In addition complex features such as channels and pockets and channels can be machined in silicon wafers.
The figure shows 700 µm wafer downsizing top view and side view.
Cut features are round holes with no cracking or rough edges.
Laser cutting of silicon wafers is possible in all sizes and thicknesses with feature sizes as small as 20 microns.
All that is required is a drawing to getting started.
However laser ablation has its own problems.
Due to the reflection it only made slight scratch and could not cut.
Solutions are available for machining smaller diameter wafers from larger ones solar cell downsizing or silicon stencil cutting.
Laserod s systems division builds and integrates a full line of diode and fiber laser micromachining equipment for uses that include silicon wafer resizing resistor trimming cutting thin metals and plastics scribing substrates of alumina and silicon resistor trimming and patterning thin films such as ito on glass or plastic.
Traditionally silicon wafers have been cut with diamond saws occasionally using a scribe and break process which have the limitation that they can only cut straight lines and suffer from edge chipping and frequency doubled vanadate lasers which are both slow and expensive to operate as is the microjet process.
Material thickness up to 1mm.
We tried cutting a silicon wafer with fabool laser mini 1 6w and 3 5w model.
Dicing of silicon wafers may also be performed by a laser based technique the so called stealth dicing process.
Blackstar is a wafer dicing system utilizing fantom width laser dicing technology fwldt invented and patented by laser photonics and modified to accommodate the requirements of a silicon wafer singulation process without affecting the existent dicing method processes or procedures.